Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies
Journal
International Electron Devices Meeting
Journal Volume
2016-February
Pages
22.6.1-22.6.4
Date Issued
2015
Author(s)
Lee, M.H.
Chen, P.-G.
Liu, C.
Chu, K.-Y.
Cheng, C.-C.
Xie, M.-J.
Liu, S.-N.
Lee, J.-W.
Huang, S.-J.
Tang, M.
Li, K.-S.
Chen, M.-C.
Type
conference proceeding