Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies
Journal
International Electron Devices Meeting
Journal Volume
2016-February
Pages
22.6.1-22.6.4
Date Issued
2015
Author(s)
Lee, M.H.
Chen, P.-G.
Liu, C.
Chu, K.-Y.
Cheng, C.-C.
Xie, M.-J.
Liu, S.-N.
Lee, J.-W.
Huang, S.-J.
Tang, M.
Li, K.-S.
Chen, M.-C.
Abstract
Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window VT (threshold voltage) shift for = 42mV/dec, SS rev = 28mV/dec, and switch-off x for IL (interfacial layer) and low gate leakage current. The FE-HZO FETs is operated at room temperature and 150K to obtain beyond the physical limitation of Boltzmann tyranny, and the extracted body factors are m = 0.67 and m = 0.89 for V DS = 0.1 and 0.5 V, respectively, to confirm the negative capacitance (NC) effect. There are two proposed strategies to reach hysteresis-free, including FE-HZO/epi-Ge/Si FETs with experimentally VT shift 3mV in hysteresis window, and 3nm-thick FE-HZO resulting hysteresis-free and sub-0.2V switching by numerical simulation.
Type
conference proceedings