Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
3
Pages
451-453
Date Issued
2003
Author(s)
Abstract
A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range.
Other Subjects
Amorphization;Annealing;Chemical vapor deposition;Ion beams;Ion implantation;Point defects;Thin films;Nanowires (NW);Gallium nitride
Type
journal article