https://scholars.lib.ntu.edu.tw/handle/123456789/616408
標題: | Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires | 作者: | Dhara S. Datta A. Wu C.T. Lan Z.H. Chen K.H. Wang Y.L. Chen L.C. Hsu C.W. Lin H.M. Chen C.C. LI-CHYONG CHEN |
公開日期: | 2003 | 卷: | 82 | 期: | 3 | 起(迄)頁: | 451-453 | 來源出版物: | Applied Physics Letters | 摘要: | A study of Ga+ ion implantation of chemical-vapor-deposited GaN nanowires (NW) was presented. Observation of the defect structures in the irradiated samples suggested agglomeration of point-defect clusters to be the major component of disorder at high fluences. The results showed that dynamic annealing plays an important role in emphasizing the layer-by-layer structure of defect accumulation in the intermediate fluence range. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037455247&doi=10.1063%2f1.1536250&partnerID=40&md5=307f9c8cb9ca973ca6eee92db75c46bc https://scholars.lib.ntu.edu.tw/handle/123456789/616408 |
ISSN: | 00036951 | DOI: | 10.1063/1.1536250 | SDG/關鍵字: | Amorphization;Annealing;Chemical vapor deposition;Ion beams;Ion implantation;Point defects;Thin films;Nanowires (NW);Gallium nitride |
顯示於: | 凝態科學研究中心 |
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