Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide
Journal
Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur
Journal Volume
72
Journal Issue
2
Pages
1956-1961
Date Issued
2016
Author(s)
Abstract
In order to reduce the degradation caused by lateral non-uniformity (LNU) of gate oxides in metal-oxide-semiconductor (MOS) devices, a method to ameliorate the lateral oxide uniformity was proposed. By adopting the anodic oxidation compensation (ANO-compensation) technique to compensate the embedded aluminum layer, significant uniformity improvements were found in capacitance per unit area-voltage (C’-V) and current density-voltage (J-V) characteristics, and the percentage dispersions of capacitance per unit area and current density in accumulation regime also give the support to uniformity improvement. Besides, the outcomes of reliability tests also evidence that the LNU is reduced. Hence, with the advantages of superior oxide uniformity, the enhanced response in inversion capacitance was observed. At last, nitrate solution is used for validating the advantage of anodic oxidation compensation, and the J-V and C-V characteristics show that anodic oxidation compensation is necessary for fabricating reliable MOS-based devices.
Type
journal article