38-GHz 無線收發系統關鍵元組件技術-子計劃八 HBT 中頻積體電路及後製程研究(2/3)
Date Issued
2003-07-31
Date
2003-07-31
Author(s)
DOI
912219E002021
Abstract
A 5.7 GHz monolithic
interpolative voltage controlled oscillator using
InGaP/GaAs HBT technology is demonstrated
for the first time. Frequency tuning is achieved
by changing the open loop gain instead of the
tank capacitor. The experimental result showed
that a 400-MHz tuning range at 5.7 GHz was
realized, which can meet the requirement of
5.7GHz ISM band.
interpolative voltage controlled oscillator using
InGaP/GaAs HBT technology is demonstrated
for the first time. Frequency tuning is achieved
by changing the open loop gain instead of the
tank capacitor. The experimental result showed
that a 400-MHz tuning range at 5.7 GHz was
realized, which can meet the requirement of
5.7GHz ISM band.
Subjects
磷化銦鎵
砷化鎵
內插式
壓控振盪器
Publisher
臺北市:國立臺灣大學電機工程學系暨研究所
Type
report
File(s)![Thumbnail Image]()
Loading...
Name
912219E002021.pdf
Size
197.56 KB
Format
Adobe PDF
Checksum
(MD5):76cee31c3bc75e4e6e1f09fa84cf9927