First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09 pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching
Journal
Digest of Technical Papers - Symposium on VLSI Technology
Journal Volume
2019-June
Pages
T180-T181
Date Issued
2019
Author(s)
Type
conference paper