Increase in the Efficiency of III-Nitride Micro-LEDs: Atomic-Layer Deposition and Etching
Journal
IEEE Nanotechnology Magazine
Journal Volume
15
Journal Issue
3
Pages
18-34
Date Issued
2021
Author(s)
Liu, An-Chen
Huang, Yu-Ming
Singh, Konthoujam James
Ahmed, Tanveer
Liou, Fang-Jyun
Liou, Yu-Hau
Ting, Chao-Cheng
Li, Yiming
Samukawa, Seiji
Kuo, Hao-Chung
Abstract
MICRO-LEDs ( n-LEDs) HAVE been engaged in the next-generation display technology and evolved for various applications from several electronics manufacturers and institutions. The area of n-LEDs (less than 10 # 10 nm2) is desired for the high pixelsper-inch (PPI) value of the microdisplay, but the sidewall effect from the etching process will drop the quantum efficiency ? 2007-2011 IEEE.
Subjects
Atomic layer deposition
Efficiency
Etching
Display technologies
Electronics manufacturers
Etching process
III-Nitride
Microdisplays
Sidewall effects
Light emitting diodes
Type
journal article