Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Journal

Applied Physics Letters

Journal Volume

99

Journal Issue

4

Date Issued

2011

Author(s)

Chu, L.K.

Merckling, C.

Alian, A.

Dekoster, J.

Kwo, J.

Caymax, M.

Heyns, M.

DOI

10.1063/1.3617436

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443356

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79961038335&doi=10.1063%2f1.3617436&partnerID=40&md5=293a5d6b140ead3b5afe88f592ec2182

Type

journal article