A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications
Journal
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Date Issued
2021
Author(s)
Abstract
This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth. ? 2021 IEEE.
Subjects
gain enhancement
layout
millimeter wave (MMW))
power amplifier
Broadband amplifiers
CMOS integrated circuits
Integrated circuit layout
Millimeter waves
Broad bandwidths
Chip areas
Gain enhancement
Layout
Layout structure
Millimeter wave )
Millimeterwave power amplifiers
Performance
Small signal gain
Power amplifiers
SDGs
Type
conference paper