https://scholars.lib.ntu.edu.tw/handle/123456789/607318
標題: | A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications | 作者: | Chuang K.-J Bai W.-T Chen Y.-C Lin W.-J Tsai J.-H TIAN-WEI HUANG |
關鍵字: | gain enhancement;layout;millimeter wave (MMW));power amplifier;Broadband amplifiers;CMOS integrated circuits;Integrated circuit layout;Millimeter waves;Broad bandwidths;Chip areas;Gain enhancement;Layout;Layout structure;Millimeter wave );Millimeterwave power amplifiers;Performance;Small signal gain;Power amplifiers | 公開日期: | 2021 | 來源出版物: | 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 | 摘要: | This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85118136718&doi=10.1109%2fRFIT52905.2021.9565301&partnerID=40&md5=b5b954ab9e703b6f0be79eabf1d34c60 https://scholars.lib.ntu.edu.tw/handle/123456789/607318 |
DOI: | 10.1109/RFIT52905.2021.9565301 |
顯示於: | 電機工程學系 |
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