Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Selective area growth of InAs nanowires from SiO<inf>2</inf>/Si(1?1?1) templates direct-written by focused helium ion beam technology
Details
Selective area growth of InAs nanowires from SiO2/Si(1?1?1) templates direct-written by focused helium ion beam technology
Journal
Journal of Crystal Growth
Journal Volume
484
Pages
56-63
Date Issued
2018
Author(s)
Yang, C.-W.
Chen, W.-C.
Chou, C.
HAO-HSIUNG LIN
DOI
10.1016/j.jcrysgro.2017.12.029
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500390
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039741637&doi=10.1016%2fj.jcrysgro.2017.12.029&partnerID=40&md5=b0aaa4b9032df04b90b5e7c8241cf52d
Type
journal article
