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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Details
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Journal
2010 Asia Communications and Photonics Conference and Exhibition
Pages
56-57
Date Issued
2010
Author(s)
Lai, B.-H.
Cheng, C.-H.
GONG-RU LIN
DOI
10.1109/ACP.2010.5682837
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-79851497080&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/358008
Type
conference paper