Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Journal
2010 Asia Communications and Photonics Conference and Exhibition
Pages
56-57
Date Issued
2010
Author(s)
Abstract
The SiO x thickness affects the Si -QDs based MOSLED. The EL wavelength redshifts from 430 nm to 510 nm when the SiO x thickness increasing from 125 nm to 385 nm. The Si-QDs based MOSLED with the SiO x thickness of 385 nm has the maximum EL power of 469 nW.
Type
conference paper