Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires
Journal
Materials Research Society Symposium - Proceedings
Journal Volume
776
Pages
23-30
Date Issued
2003
Author(s)
Lin H.-M.
Yang J.
Chen Y.-L.
Liu Y.-C.
Yin K.-M.
Kai J.-J.
Chen F.-R.
Chen L.-C.
Chen Y.-F.
Chen C.-C.
Abstract
High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.
SDGs
Other Subjects
Crystal growth;Gallium nitride;Optical properties;Photoluminescence;Piezoelectricity;Raman scattering;Semiconductor quantum dots;Transmission electron microscopy;X ray diffraction analysis;Lattice mismatch;Nanowires;Nanostructured materials
Type
conference paper