https://scholars.lib.ntu.edu.tw/handle/123456789/616409
標題: | Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires | 作者: | Lin H.-M. Yang J. Chen Y.-L. Liu Y.-C. Yin K.-M. Kai J.-J. Chen F.-R. Chen L.-C. Chen Y.-F. Chen C.-C. LI-CHYONG CHEN |
公開日期: | 2003 | 卷: | 776 | 起(迄)頁: | 23-30 | 來源出版物: | Materials Research Society Symposium - Proceedings | 摘要: | High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-12144285923&doi=10.1557%2fproc-776-q2.6&partnerID=40&md5=371ca7f94ec8ebf2a6ce3ecf39b1a529 https://scholars.lib.ntu.edu.tw/handle/123456789/616409 |
ISSN: | 02729172 | DOI: | 10.1557/proc-776-q2.6 | SDG/關鍵字: | Crystal growth;Gallium nitride;Optical properties;Photoluminescence;Piezoelectricity;Raman scattering;Semiconductor quantum dots;Transmission electron microscopy;X ray diffraction analysis;Lattice mismatch;Nanowires;Nanostructured materials |
顯示於: | 凝態科學研究中心 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。