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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Data retention characterization of gate-injected gold-nanoparticle non-volatile memory with low-damage CF <inf>4</inf> -plasma-treated blocking oxide layer
Details
Data retention characterization of gate-injected gold-nanoparticle non-volatile memory with low-damage CF 4 -plasma-treated blocking oxide layer
Journal
Nanomaterials
Journal Volume
7
Journal Issue
11
Date Issued
2017
Author(s)
Liu, Y.-H.
Kao, C.-H.
Cheng, T.-C.
Wu, C.-I.
Wang, J.-C.
CHIH-I WU
DOI
10.3390/nano7110385
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498012
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85034430228&doi=10.3390%2fnano7110385&partnerID=40&md5=618c2f592c82b79877fb8682c8821fd8
Type
journal article