Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation
Journal
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages
165-168
Date Issued
2004
Author(s)
Abstract
Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices. ©2004 IEEE.
Other Subjects
Annealing; Capacitors; Chemical vapor deposition; CMOS integrated circuits; Current density; Deuterium; Dielectric materials; Doping (additives); Electric resistance; Hydrogen; Leakage currents; Magnetron sputtering; Metallizing; Parameter estimation; Polysilicon; Reliability; Deuterium-treated technology; Gate resistance; Metal-insulator-silicon (MIS) capacitors; Optical reliability; Gates (transistor)
Type
conference paper