https://scholars.lib.ntu.edu.tw/handle/123456789/632209
標題: | Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation | 作者: | Yu C.-Y Chen T.C Lee M.H Huang S.-H Lee L.S CHEE-WEE LIU |
公開日期: | 2004 | 起(迄)頁: | 165-168 | 來源出版物: | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | 摘要: | Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices. ©2004 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-14844297748&partnerID=40&md5=d6bdd3d1d023c67e343bbfd19db90e70 https://scholars.lib.ntu.edu.tw/handle/123456789/632209 |
SDG/關鍵字: | Annealing; Capacitors; Chemical vapor deposition; CMOS integrated circuits; Current density; Deuterium; Dielectric materials; Doping (additives); Electric resistance; Hydrogen; Leakage currents; Magnetron sputtering; Metallizing; Parameter estimation; Polysilicon; Reliability; Deuterium-treated technology; Gate resistance; Metal-insulator-silicon (MIS) capacitors; Optical reliability; Gates (transistor) |
顯示於: | 電機工程學系 |
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