X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD
Journal
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Date Issued
2016
Author(s)
Xin, J.
Chang, C.M.
Hsueh, C.-H.
Lee, J.-F.
Chen, J.-M.
Lin, H.-H.
Lu, N.
Ferguson, I.T.
Guan, Y.
Wan, L.
Yang, Q.
Feng, Z.C.
Abstract
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.
Type
conference paper