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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
Details
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
Journal
IEEE Electron Device Letters
Journal Volume
25
Journal Issue
10
Pages
693-695
Date Issued
2004
Author(s)
CHEE-WEE LIU
Hua, W.-C.
Lee, M.H.
Chen, P.S.
Maikap, S.
Liu, C.W.
Chen, K.M.
CHEE-WEE LIU
DOI
10.1109/LED.2004.834884
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-5044252616&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/309373
Type
journal article