Fabrication and characterization of InGaAs fin structure high electron mobility transistors
Journal
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Date Issued
2016
Author(s)
Abstract
The InGaAs planar and fin structure high electron mobility transistors (FinHEMTs) are demonstrated in this report. Compared with planar devices, threshold voltage (V T ) of FinHEMT increases from -1.64 V to -1.04 V at V D = 2.0 V. On the other hand, sub-threshold swing (SS) decreases from 251.8 mV/decade to 88.4 mV/decade and drain induced barrier lowering (DIBL) reduces from 105.2mV/V to 52.6mV/V. A Silvaco TCAD is used to simulate band diagram of gate region to verify and explain the gate control mechanisms of FinHEMT. The simulation results indicate that band bending at metal and semiconductor interface, which is between etched fin sidewall and gate metal has significantly large influence on device on-off characteristics.
SDGs
Type
conference paper