Fabrication and characterization of InGaAs fin structure high electron mobility transistors

Journal
2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
Date Issued
2016
Author(s)
Chang, C.-M.
Chang, L.-C.
DOI
URI
URL
SDGs

[SDGs]SDG7

Type
conference paper

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