Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition

Growth and band gap of strained 〈110〉 Si1-xGe x layers on silicon substrates by chemical vapor deposition

Journal

Applied Physics Letters

Journal Volume

65

Journal Issue

1

Pages

76-78

Date Issued

1994

Author(s)

Liu, C.W.

Sturm, J.C.

Lacroix, Y.R.J.

Thewalt, M.L.W.

Perovic, D.D.

DOI

URI

Type

journal article