Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

Journal

Journal of Applied Physics

Journal Volume

92

Journal Issue

11

Pages

6880-6885

Date Issued

2002

Author(s)

CHIEH-HSIUNG KUAN

Lee, S.W.

Chen, H.C.

Chen, L.J.

Peng, Y.H.

Kuan, C.H.

Cheng, H.H.

CHIEH-HSIUNG KUAN

DOI

URI

Type

journal article