A Single-Chip Bluetooth EDR Device in 0.13μm CMOS
Journal
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages
558-560
Date Issued
2007-02
Author(s)
B. Marholev
Rofougaran A.
Rofougaran M.
Syed M.
Lee R.
Wong Y.C.
Lin J.
Mak S.
Lettieri P.
Kim H.
Jensen H.
Ibrahim B.
Chien C.M.
Castaneda J.
Zolfaghari A.
Anand S.
Khorram S.
Kappes M.
Bhatti I.
Wu S.
Roufoogaran R.
Zhang L.
Chien E.
Pan M.
Marholev B.
Abstract
A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and a direct-conversion transmitter architecture. It is implemented in a 0.13μm CMOS process and occupies 11.8mm2. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms. © 2007 IEEE.
SDGs
Other Subjects
CMOS integrated circuits; Electric transformers; Energy conversion; Microprocessor chips; Sensitivity analysis; Conversion transmitter architecture; Single chip Bluetooth; Bluetooth
Type
conference paper