Fringing-Induced Narrow-Channel-Effect (FINCE) RElated Capacitance Behavior of Nanometer FD SOI NMOS Devices Using Mesa-Isolation Via 3D Simulation

Journal

EDSM

Date Issued

2005-10

Author(s)

G. S. Lin

J. B. Kuo

URI

http://scholars.lib.ntu.edu.tw/handle/123456789/317640

Type

conference paper