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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
Details
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
Journal
International electron devices and materials symposia
Pages
B4-5
Date Issued
2007-12
Author(s)
I. C. Chen
G. Tsai
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/333534
Type
conference paper