Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga 2O3(Gd2O3)/In0.75Ga 0.25As MOSFET

Journal

Journal of Crystal Growth

Journal Volume

323

Journal Issue

1

Pages

518-521

Date Issued

2011

Author(s)

Lin, T.D.

Chang, P.

Wu, Y.D.

Chiu, H.C.

Kwo, J.

DOI

10.1016/j.jcrysgro.2010.12.079

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443362

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958005257&doi=10.1016%2fj.jcrysgro.2010.12.079&partnerID=40&md5=e73b8312325c06452caef70c5b58af46

Type

journal article