Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga 2O3(Gd2O3)/In0.75Ga 0.25As MOSFET
Journal
Journal of Crystal Growth
Journal Volume
323
Journal Issue
1
Pages
518-521
Date Issued
2011
Author(s)
Abstract
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al2O3/Ga2O 3(Gd2O3) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-μm-gate-length In0.75Ga 0.25As MOSFETs have achieved a maximum drain current of 1.23 mA/μm, a peak transconductance of 464 μS/μm, and a peak field-effect electron mobility of 1600 cm2/V s. A new record of maximum drain current has been set, not only for IIIV MOSFETs but also for all enhancement mode MOSFETs with similar device dimensions, regardless of channel materials and device configurations. © 2010 Elsevier B.V. All rights reserved.
SDGs
Type
journal article