Device-level transient analysis of a 1 μm six-transistor BiCMOS inverter circuit using a large-scale quasi-3D device simulator

Resource

Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991

Journal

Bipolar Circuits and Technology Meeting, 1991.

Pages

-

Date Issued

1991-09

Date

1991-09

Author(s)

Kuo, J.B.

Chen, Y.W.

DOI

DOI

N/A

URI

Type

journal article

File(s)

Name

00160965.pdf

Size

218.35 KB

Format

Adobe PDF

Checksum

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