SiGe Superlattice Infrared Photodetector with Schottky Barrier for Background Limited Performance at High Temperature
|Keywords:||暗電流;蕭基接面;超晶格;背景限制溫度;Dark current;superlattice;Schottky contact;Background Limited Performance||Issue Date:||2004||Abstract:||null
With the development of novel semiconductor industry, the sizes of IC devices have been scaled down and the signal is very small during the transmission between these devices. For this reason, background limit performance (BLIP) of a photodetector is more important than the value of responsivity. Schottky contact functions as a large resistance with series connection to the structure of a SLIP, and response (means current in this thesis) of the SLIP is very small due to the low bias voltage applied to the active region. In this thesis, we use metal-semiconductor Schottky barrier to reduce the dark current and to provide a large resistance.
|Appears in Collections:||光電工程學研究所|
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