https://scholars.lib.ntu.edu.tw/handle/123456789/148083
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor | National Taiwan University Dept Elect Engn | en |
dc.contributor.author | Yang, Yi-Lin | en |
dc.contributor.author | Hwu, Jenn-Gwo | en |
dc.creator | Yang, Yi-Lin; Hwu, Jenn-Gwo | - |
dc.date | 2004-10 | - |
dc.date.accessioned | 2006-11-15 | - |
dc.date.accessioned | 2018-07-06T09:45:38Z | - |
dc.date.available | 2006-11-15 | - |
dc.date.available | 2018-07-06T09:45:38Z | - |
dc.date.issued | 2004-10 | - |
dc.identifier | 246246/200611150121591 | zh_TW |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121591 | - |
dc.description.abstract | Rapid thermal oxide followed by anodization in direct current superimposed with scanning frequency alternating current was demonstrated for the first time to have an improved quality in ultrathin gate oxides. Compared with the thermal oxide grown without the scanning-frequency anodization (SF ANO) treatment, the gate leakage current density ( ) of SF ANO sample is significantly reduced without increasing the thickness of gate oxide. In addition, it could be observed that the interface trap density ( it) is reduced with tighter distribution. It is suggested that the bulk traps and interface traps in thermally grown oxide can be repaired during the SF ANO process. | en |
dc.format | application/pdf | zh_TW |
dc.format.extent | 136932 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en-US | zh_TW |
dc.language.iso | zh_TW | - |
dc.publisher | Taipei:National Taiwan University Dept Mech Engn | en |
dc.relation | IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 10, OCTOBER 2004 | en |
dc.relation.ispartof | IEEE ELECTRON DEVICE LETTERS | - |
dc.source | http://ieeexplore.ieee.org/ | en |
dc.subject | Metal–oxide–semiconductor (MOS) | en |
dc.subject | scanning frequency anodization (SF ANO) | en |
dc.subject | ultrathin gate oxide | en |
dc.title | Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique | en |
dc.type | journal article | en |
dc.relation.pages | - | - |
dc.relation.journalvolume | VOL. 25 | - |
dc.relation.journalissue | NO. 10 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121591/1/4694.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | zh_TW | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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