| 公開日期 | 標題 | 作者 | 資料類型 | scopus | WOS | 全文 |
| 2004 | A 0.1-23-GHz SiGe BiCMOS analog multiplier and mixer based on attenuation-compensation technique | Tsai, Ming-Da; Lin, Chin-Shen; Wang, Chi-Hsueh; Lien, Chun-Hsien; Wang, Huei | journal article | | 0 |  |
| 2003 | A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier | Liu, Ren-Chieh; Lin, Chin-Shen; Deng, Kuo-Liang; Wang, Huei | journal article | | | |
| 2009 | 0.5-V 5.6-GHz CMOS receiver subsystem | SHEY-SHI LU | journal article | | | |
| 2009 | 0.5V SOI CMOS Dual-Threshold Circuit Technique Via DTMOS for Design Optimization of Low-Power VLSI System Applications | JAMES-B KUO | conference paper | | | |
| 2003 | A 0.6-22-GHz broadband CMOS distributed amplifier | Liu, Ren-Chieh; Deng, Kuo-Liang; Wang, Huei | journal article | | | |
| 2005 | 0.7 V Manchester carry look-ahead circuit using PD SOI CMOS asymmetrical dynamic threshold pass transistor techniques suitable for low-voltage CMOS VLSI systems | JAMES-B KUO ; Chiang, T.Y.; Kuo, J.B. | journal article | | 1 | |
| 2002 | 0.8 V CMOS adiabatic differential switch logic circuit using bootstrap technique for low-voltage low-power VLSI | JAMES-B KUO | journal article | 22 | 16 | |
| 2004 | A 0.8 V CMOS TSPC adiabatic DCVS logic circuit with the bootstrap technique for low-power VLSI | Chen, H.P.; Kuo, J.B. | journal article | | 0 | |
| 2002 | A 0.8 V switched-opamp bandpass /spl Delta//spl Sigma/ modulator using a two-path architecture | Chang, Hsiang-Hui; Chen, Shang-Ping; Cheng, Kuang-Wei; Liu, Shen-Iuan | journal article | 1 | 0 | |
| 2004 | A 0.8-8 GHz 9.7 mW analog-digital dual-loop adaptive-bandwidth DLL based multi-phase clock generator | Liu, Tsung-Te ; Wang, Chorng-Kuang | journal article | | 0 | |
| 2002 | 0.8V CMOS Content-Addressable-Memory (CAM) Cell Ciurcuit with a Fast Tag-Compare Capability Using Bulk PMOS Dynamic-Threshold (BP-DTMOS) Technique Based on Standard CMOS Technology for Low-Voltage VLSI Systems | JAMES-B KUO | conference paper | | 0 | |
| 2006 | [1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy | Chou, Li-Chang; Lin, Yu-Ru; Wan, Cheng-Tien; Lin, Hao-Hsiung | journal article | | | |
| 2015 | 1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy | CHAO-HSIN WU | journal article | | 0 | |
| 2008 | 1.2- to 2.2-μm tunable Raman soliton source based on a Cr : Forsterite laser and a photonic-crystal fiber | CHI-KUANG SUN | journal article | 46 | 40 | |
| 2008 | 1.2-2.2-μm tunable Raman soliton source based on a Cr: Forsterite-laser and a photonic-crystal fiber | CHI-KUANG SUN | conference paper | | | |
| 2008 | 1.2-2.2-μm tunable raman soliton source based on a cr:forsterite-laser and a photonic-crystal fiber | CHI-KUANG SUN | conference paper | 2 | 0 | |
| 2004 | A 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier | Lee, Chihun; Wu, Chia-Hsin; Liu, Shen-Iuan | journal article | | 0 | |
| 2003 | 1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties | Mao, M.H.; Wu, T.Y.; Chang, F.Y.; Lin, H.H. | journal article | | 0 | |
| 2003 | 1.3 micron In(Ga)As/GaAs quantum-dot lasers and their dynamic properties | HAO-HSIUNG LIN | conference paper | | 0 | |
| 2004 | 1.3 μm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy | Liu, P.-W.; Liao, G.-H.; Lin, H.-H. | journal article | | | |
