https://scholars.lib.ntu.edu.tw/handle/123456789/148085
標題: | Bandwidth Enhancement in an Integratable SiGe Phototransistor by Removal of Excess Carriers | 作者: | Pei, Z. Shi, J.W. Hsu, Y.M. Yuan, F. Liang, C.S. Lu, S.C. Hsieh, W.Y. Tsai, M.J. Liu, C.W. |
關鍵字: | Bandwidth;nonideal (nkT) base current;SiGe | 公開日期: | 五月-2004 | 出版社: | Taipei:National Taiwan University Dept Mech Engn | 卷: | VOL. 25 | 期: | NO. 5 | 起(迄)頁: | - | 來源出版物: | IEEE ELECTRON DEVICE LETTERS | 摘要: | In this letter, we create a path to remove excess carriers in the base region of a SiGe phototransistor (HPT) by introducing the trap centers. The behavior of the trap centers in the SiGe heterojunction bipolar transistor (HBT) is a form of nonideal (nkT) base current. The responsivity of the device is 0.43 A/W with fully SiGe HBT-compatible device structure to facilitate the integration of the following amplification circuitry. The full-width at half-maximum of the pulse is 90 ps and the tail of the optical pulse response is largely reduced with the nkT current. By reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This proposes SiGe HPT is applicable for optoelectronic technology. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/200611150121588 | 其他識別: | 246246/200611150121588 |
顯示於: | 電機工程學系 |
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