https://scholars.lib.ntu.edu.tw/handle/123456789/151541
標題: | 以分子束磊晶法成長氮化鎵系列材料(三) | 作者: | 林浩雄 | 關鍵字: | 立方結構氮化鎵材料;射頻電漿 輔助氣態源分子束磊晶法;立方結構氮化 鎵磊晶條件最佳化;cubic GaN;RF plasma assisted gas source MBE | 公開日期: | 31-七月-2001 | 出版社: | 臺北市:國立臺灣大學電機工程學系暨研究所 | 摘要: | 於本研究中,我們使用射頻電漿輔助 氣態源分子束磊晶法成長立方結構氮化鎵 材料,以之探討其磊晶條件之最佳化與其 相對應之磊晶層光學特性。於本研究的結 果中顯示,立方結構氮化鎵其磊晶時三族 元素與五族元素之最佳比例是位於三族比 例高,但不致有三族元素於表面堆積之條 件下,並不同於傳統三五族半導體之成長最 佳化。 We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate Ga stable regime and Ga droplet regime. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/7797 | 其他識別: | 892215E002054 | Rights: | 國立臺灣大學電機工程學系暨研究所 |
顯示於: | 電機工程學系 |
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892215E002054.pdf | 86.29 kB | Adobe PDF | 檢視/開啟 |
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