https://scholars.lib.ntu.edu.tw/handle/123456789/151867
標題: | 光纖通訊應用光電元件製作及數值模擬-子計畫四:含氮化 合物半導體的磊晶成長與元件應用 | 作者: | 林浩雄 | 關鍵字: | 氮砷化銦鎵;氮砷化銦;射頻電 漿輔助氣態源分子束磊晶法;InGaAsN;InAsN;RF plasma assisted gas-source MBE | 公開日期: | 31-七月-2002 | 出版社: | 臺北市:國立臺灣大學電機工程學系暨研究所 | 摘要: | 在本計畫的含氮化合物半導體研究中,我 們以加裝射頻電漿源的氣態源分子束磊晶 機來成長含氮材料,在研究的方向上大致 可分為發光波長1.3 微米之InGaAsN及2.2 微米以上InAsN 長波長半導體材料研究。 氮砷化銦鎵量子井含氮量2.8 % 的雷射元 件,於室溫下操作下,其放光波長達1.3 微米,雷射元件的內部量子效率可達 72% ,內部損耗為 6.8 cm-1,在無鏡面損 失下之臨界電流密度為 1.46 kA/cm2。 在氮砷化銦材料的研究上,我們成長一系 列井寬 3 nm、不同氮含量的氮砷化銦/砷 化銦鎵量子井結構樣品。藉由實驗上的低 溫光激螢光頻譜及理論計算結果的比較 後,我們發現氮砷化銦量子井中的電子有 效質量會隨著氮成份的增加而增加。因? 氮所引發的能隙縮減量之理論值及實驗值 各為-19.4 meV/at % N 及 -16.8 meV/at % N。此二值與過去我們在室溫下、氮砷化 銦薄膜由能隙吸收頻譜所得的 -14.7 meV/at % N 值十分接近。 In this report, we investigated two III-V-N alloys, namely InGaAsN and InAsN. All the III-V-N samples were grown by RF plasma assisted gas source molecular beam epitaxy (GSMBE). For the investigations on the InAsN material, the optical transitions in InAs1-xNx/In0.53Ga0.47As single and multiple quantum wells (QW) heterostructures have been studied using low-temperature photoluminescence (PL). The PL peak energies decreases as nitrogen content increases, showing a bowing effect due to the incorporation of nitrogen atoms into the InAs lattice. Theses PL peak energies are in good agreement with the theoretical calculation using a finite-depth square-well method which takes into account the effects of strain, quantized confinement, band-gap narrowing, and the anti-crossing interaction between the InAs conduction band and a higher-lying N localized state [Shan et al.: Phys. Rev. Lett. 82 (1999) 1221]. We also showed that the electron effective mass of InAsN is greater than that of InAs with same well width and increases with increasing N content in the studied N range. Finally, the estimated experimental and theoretical transition energy shrinkage coefficients were -16.8 and meV/at % N and -19.4 meV/at % N, respectively, both similar to our previous result, -14.7 meV/at % N, from the Fourier transform absorption spectroscopy at 300 K in InAs1-xNx bulk films. Secondly, on the investigations of InGaAsN alloy, we grew 1.3mm InGaAsN/ GaAs QW lasers. The fabricated broad area uncoated Fabry-Perot laser demonstrates a threshold current density of 1.46 kA/cm2 at room temperature. The internal quantum efficiency for this laser is 72 %, and the material loss is 6.2 cm-1. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/7881 | 其他識別: | 902215E002030 | Rights: | 國立臺灣大學電機工程學系暨研究所 |
顯示於: | 電機工程學系 |
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902215E002030.pdf | 2.97 MB | Adobe PDF | 檢視/開啟 |
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