https://scholars.lib.ntu.edu.tw/handle/123456789/155574
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Chi-Feng | en |
dc.contributor.author | Chuang, Kai-Hsiang | en |
dc.contributor.author | Chen, Yet-Min | en |
dc.contributor.author | JIUN-HAW LEE | en |
dc.contributor.author | JIAN-JANG HUANG | en |
dc.contributor.author | Wang, Yu-Wu | en |
dc.creator | Lin, Chi-Feng; Chuang, Kai-Hsiang; Chen, Yet-Min; Lee, Jiun-Haw; Huang, Jian-Jang; Wang, Yu-Wu | - |
dc.date | 2006 | en |
dc.date.accessioned | 2009-03-18T04:26:20Z | - |
dc.date.accessioned | 2018-07-06T15:57:16Z | - |
dc.date.available | 2009-03-18T04:26:20Z | - |
dc.date.available | 2018-07-06T15:57:16Z | - |
dc.date.issued | 2006 | - |
dc.identifier.issn | 0277786X | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/145882 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-33751408552&doi=10.1117%2f12.678972&partnerID=40&md5=83540543058a469de28ef076da91ec22 | - |
dc.description.abstract | In this paper, we have demonstrated the current increase with repeated measurements of Id-Vds curves with different Vg values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm2/Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of Id decreased less than 30% after exposure in air for 2 weeks. By repeating the Id-Vds measurements from 0 to -50 V with the Vg values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at Vg= -50V and Vds=50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA, After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor. | - |
dc.format | application/pdf | en |
dc.format.extent | 625248 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Proceedings of SPIE 6336: 63361F | en |
dc.relation.ispartof | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.subject | Carrier transport; Mobility; Organic thin-film transistor | - |
dc.title | Bias-dependent charge accumulation in pentacene-based thin-film transistors | en |
dc.type | conference paper | en |
dc.relation.conference | Organic Field-Effect Transistors V | - |
dc.identifier.doi | 10.1117/12.678972 | - |
dc.identifier.scopus | 2-s2.0-33751408552 | - |
dc.relation.journalvolume | 6336 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/145882/1/39.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Office of International Affairs | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.orcid | 0000-0003-3888-0595 | - |
crisitem.author.orcid | 0000-0002-5761-2177 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Administrative Unit | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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