https://scholars.lib.ntu.edu.tw/handle/123456789/155627
標題: | Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method | 作者: | CHING-FUH LIN Su, Ting-Wien Chung, Peng-Fei Liang, Eih-Zhe MIIN-JANG CHEN CHEE-WEE LIU |
關鍵字: | Electroluminescence; Liquid-phase deposition; Metal-oxide-semiconductor tunneling diode; Radiative recombination | 公開日期: | 2003 | 卷: | 77 | 期: | 2 | 起(迄)頁: | 430-433 | 來源出版物: | Materials Chemistry and Physics | 摘要: | Significant enhancement of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide-semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase deposition (LPD). The LPD grown oxide has nano-structures with the grain size of 10-20nm. The nano-structure of oxide causes the simultaneous localization of electrons and holes at the Si/SiO2 interface, similar to the formation of excitons. This makes the process of the phonon-assisted radiative recombination of electron-hole pair more like two-particle collision than three-particle collision, so increasing the probability of radiative recombination. The measured EL efficiency could be more than 1×10-6. © 2002 Elsevier Science B.V. All rights reserved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/145937 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037437419&doi=10.1016%2fS0254-0584%2802%2900099-8&partnerID=40&md5=25404bb59d34da5cd53bc9caf7bf86f9 |
ISSN: | 02540584 | DOI: | 10.1016/S0254-0584(02)00099-8 | SDG/關鍵字: | Deposition; Electroluminescence; Electrons; Energy gap; Excitons; Grain size and shape; Interfaces (materials); Nanostructured materials; Phonons; Metal oxide silicon tunneling diodes; Tunnel diodes |
顯示於: | 電機工程學系 |
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