https://scholars.lib.ntu.edu.tw/handle/123456789/155683
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shiu, Shu-Chia | en |
dc.contributor.author | Tsakalakos, Loucas | en |
dc.contributor.author | Hsiao, Chieh-Yu | en |
dc.contributor.author | Chao, Cha-Hsin | en |
dc.contributor.author | Hung, Shih-Che | en |
dc.contributor.author | Lin, Ching-Fuh | en |
dc.creator | Shiu, Shu-Chia; Tsakalakos, Loucas; Hsiao, Chieh-Yu; Chao, Cha-Hsin; Hung, Shih-Che; Lin, Ching-Fuh | - |
dc.date | 2008 | en |
dc.date.accessioned | 2009-03-18T07:59:27Z | - |
dc.date.accessioned | 2018-07-06T16:38:18Z | - |
dc.date.available | 2009-03-18T07:59:27Z | - |
dc.date.available | 2018-07-06T16:38:18Z | - |
dc.date.issued | 2008 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/145995 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw/bitstream/246246/145995/1/96.pdf | - |
dc.description.abstract | We demonstrate the method of transferring aligned single crystal silicon nanowires (SiNWs) to transparent substrate. The alignment of the transferred nanowires is almost identical to the original one. The density of the transferred SiNWs can achieve 3×107 nanowires/mm2. The low temperature fabrication processes are compatible for a wide range of substrates. The transmission coefficient below 10 % at a wide bandwidth, 400-1100 nm, was found in the transferred SiNWs. The high dense aligned SiNWs are promising for future photovoltaic applications. | - |
dc.format | application/pdf | en |
dc.format.extent | 1816026 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Proceedings of SPIE 7047: 70470F | en |
dc.relation.ispartof | Proceedings of SPIE | - |
dc.subject | Aligned; Bending stress; Electroless; Low temperature; Nanowires; SEM; Silicon; Transfer; Transmission spectrum; Transparent | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Electric wire; Nanostructured materials; Nanostructures; Nanotechnology; Nanowires; Photovoltaic effects; Plasma diagnostics; Powders; Silicon; Silicon wafers; Single crystals; Aligned; Bending stress; Electroless; Low temperature; SEM; Transfer; Transmission spectrum; Transparent; Substrates | - |
dc.title | Transfer of aligned single crystal silicon nanowires to transparent substrates | en |
dc.type | conference paper | en |
dc.identifier.doi | 10.1117/12.794384 | - |
item.fulltext | with fulltext | - |
item.grantfulltext | open | - |
dc.relation.journalvolume | 7047 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/145995/1/96.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.openairetype | conference paper | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-3787-2163 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
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