https://scholars.lib.ntu.edu.tw/handle/123456789/155704
標題: | Suppression of gate leakage current in GaN MOS devices by passivation with photo-grown Ga2O3 | 作者: | Wu, H.-M. LUNG-HAN PENG |
公開日期: | 2006 | 卷: | 3 | 起(迄)頁: | 2291-2294 | 來源出版物: | Physica Status Solidi (C) Current Topics in Solid State Physics | 會議論文: | 6th International Conference on Nitride Semiconductors, ICNS-6 | 摘要: | We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as 2×10-7 A/cm2 at a bias field up to 2 MV/cm is observed in the GaN MOS devices that are formed by novel PEC wet etching and have the top surface and mesa sidewall passivated by the photo-grown Ga2O3. The depth-resolved X-ray photo-emission spectra (XPS) and atomic-ratio analysis indicate that a intermediate and thin ∼ 20 nm GaON layer of graded composition forms the Ga2O 3/GaON/GaN system, which releases the interfacial strain and thus minimizes the density of interfacial states. The IV and high-frequency CV analyses reveal that the Ga2O3 layer can sustain an electrical breakdown field of 3.5 MV/cm and the structures have a low density of interfacial state (Dit) in the order of 1011 eV -1cm-2. We attribute these results to the immunity to surface damage by the novel PEC wet etching and the effective passivation on mesa sidewall and surface formed by the photo-grown Ga2O3. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA,. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/146024 https://www.scopus.com/inward/record.uri?eid=2-s2.0-33746358834&doi=10.1002%2fpssc.200565272&partnerID=40&md5=a916fcac77b84bfe2fe331e784975ccd |
ISSN: | 18626351 | DOI: | 10.1002/pssc.200565272 | SDG/關鍵字: | Atomic-ratio analysis; Interfacial state; Leakage current density; Wet etching; 73.40.Qv; 81.05.Ea; 81.65.Cf; 82.45.Un; 82.80.Pv; 85.30.Tv; Electric breakdown; Etching; Gallium nitride; Interfacial energy; MOS devices; Passivation; X ray photoelectron spectroscopy; Emission spectroscopy; Wet etching; Leakage currents; MOS devices |
顯示於: | 電機工程學系 |
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