https://scholars.lib.ntu.edu.tw/handle/123456789/292413
標題: | Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal | 作者: | Chen, Y.-C. Lee, C.-Y. JENN-GWO HWU |
關鍵字: | Alternating current; Anodic oxidation; Gate oxide | 公開日期: | 2001 | 卷: | 45 | 期: | 9 | 起(迄)頁: | 1531-1536 | 來源出版物: | Solid-State Electronics | 摘要: | An advanced method to prepare ultra-thin (<30 Å) anodic oxides is proposed. The voltage polarity applied to the silicon wafer is switched between a positive and a negative value periodically during anodic oxidation. It is belived that the more effective negative charges causing a barrier height for electron tunneling are generated in the oxide when a negative bias is applied to the wafer. In addition, the compensation effect of anion redistribution during voltage polarity switching contributes to eliminating the number of leakage paths in the oxide. Therefore, oxides prepared by this technique and followed by rapid thermal anneal exhibit lower leakage current and higher breakdown endurance than the conventional constant-voltage anodic oxides and the rapid thermal oxides do. In addition, various switching conditions are investigated to examine the effects of negative bias and the switching frequency upon the characteristics of oxides so that a better growth condition can be found to grow high-qua lity gate oxides. © 2001 Elsevier Science Ltd. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035448116&doi=10.1016%2fS0038-1101%2801%2900182-4&partnerID=40&md5=6939e50d1e5bb494a83e9b0b92d2068c http://scholars.lib.ntu.edu.tw/handle/123456789/292413 |
DOI: | 10.1016/S0038-1101(01)00182-4 | SDG/關鍵字: | Anodic oxidation; Electric breakdown; Electron tunneling; Leakage currents; Rapid thermal annealing; Silicon wafers; Thermal effects; Threshold voltage; Alternating current anodization; Breakdown endurance; Gates (transistor) |
顯示於: | 電機工程學系 |
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