https://scholars.lib.ntu.edu.tw/handle/123456789/294641
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | W.-S. Lour | en_US |
dc.contributor.author | M.-K. Tsai | en_US |
dc.contributor.author | K.-C. Chen | en_US |
dc.contributor.author | Y.-W. Wu | en_US |
dc.contributor.author | S.-W. Tan | en_US |
dc.contributor.author | YING-JAY YANG | - |
dc.creator | Lour W.-S;Tsai M.-K;Chen K.-C;Wu Y.-W;Tan S.-W;Yang Y.-J. | - |
dc.date.accessioned | 2018-09-10T03:51:06Z | - |
dc.date.available | 2018-09-10T03:51:06Z | - |
dc.date.issued | 2001-10 | - |
dc.identifier.issn | 02681242 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/294641 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035481052&doi=10.1088%2f0268-1242%2f16%2f10%2f303&partnerID=40&md5=9291855194b500a97aab8d8c524e51fb | - |
dc.description.abstract | In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single- and dual-gate methodologies have been characterized with special emphasis on precisely controlling the device linearity and the gate-voltage swing. A composite channel employing a GaAs delta-doped (δ(n+)) sheet and an undoped In0.2Ga0.8As layer characterizes the key features of the proposed PHEMT profile. Better carrier confinement for both the electron and the hole due to the InGaP/InGaAs hetero-interface and superior carrier transport properties at the channel/buffer interface, together with the redistributed carrier profile, contribute to high-linearity performances. On the other hand, high etching selectivity between the GaAs cap and the InGaP Schottky layers makes it possible to precisely position both of the gates. The gate-voltage dependence of transconductance for the first equivalent gate with several VGS2 shows that the available gate-voltage swing is in the range 0-4.0 V. | - |
dc.language | en | en |
dc.relation.ispartof | Semiconductor Science and Technology | en_US |
dc.source | AH-anncc | - |
dc.subject.mesh | Electric potential; Electron mobility; Semiconducting gallium arsenide; Semiconducting indium compounds; Transconductance; Pseudomorphic high electron mobility transistors (PHEMT); Gates (transistor) | - |
dc.title | Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1088/0268-1242/16/10/303 | - |
dc.identifier.scopus | 2-s2.0-0035481052 | - |
dc.identifier.isi | WOS:000171559600007 | - |
dc.relation.pages | 826-830 | - |
dc.relation.journalvolume | 16 | - |
dc.relation.journalissue | 10 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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