https://scholars.lib.ntu.edu.tw/handle/123456789/296542
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu, Y.S. | en_US |
dc.contributor.author | Ya, M.H. | en_US |
dc.contributor.author | Su, W.S. | en_US |
dc.contributor.author | Chen, T.T. | en_US |
dc.contributor.author | HAO-HSIUNG LIN | en_US |
dc.contributor.author | YANG-FANG CHEN | en_US |
dc.creator | Chiu, Y.S.;Ya, M.H.;Su, W.S.;Chen, T.T.;Chen, Y.F.;Lin, H.H. | - |
dc.date.accessioned | 2018-09-10T04:07:46Z | - |
dc.date.available | 2018-09-10T04:07:46Z | - |
dc.date.issued | 2002 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-0037164857&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/296542 | - |
dc.description.abstract | The anisotropic properties of type-II GaAs/GaAsSb heterostructures were studied using photoluminescence (PL) and photoconductivity (PC). It was demonstrated that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells were attributed to the orientation of the inherent chemical bonds at heterointerfaces. | - |
dc.language | en | en |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.source | AH | - |
dc.subject.other | Anisotropy; Chemical bonds; Heterojunctions; Photoconductivity; Photoluminescence; Polarization; Semiconducting gallium arsenide; Giant polarized photoluminescence; Semiconductor quantum wells | - |
dc.title | Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.1532108 | - |
dc.identifier.scopus | 2-s2.0-0037164857 | - |
dc.relation.pages | 4943-4945 | - |
dc.relation.journalvolume | 81 | - |
dc.relation.journalissue | 26 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.dept | Physics | - |
crisitem.author.dept | Center for Condensed Matter Sciences | - |
crisitem.author.orcid | 0000-0003-3408-6538 | - |
crisitem.author.orcid | 0000-0003-1203-5115 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Science | - |
crisitem.author.parentorg | Others: University-Level Research Centers | - |
顯示於: | 物理學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。