Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds
Journal
Applied Physics Letters
Journal Volume
81
Journal Issue
26
Pages
4943-4945
Date Issued
2002
Author(s)
Abstract
The anisotropic properties of type-II GaAs/GaAsSb heterostructures were studied using photoluminescence (PL) and photoconductivity (PC). It was demonstrated that the polarization does not depend on the excitation intensity as well as temperature, which excludes any extrinsic mechanisms related to the in-plane anisotropy. The observed polarized optical properties of GaAsSb/GaAs multiple quantum wells were attributed to the orientation of the inherent chemical bonds at heterointerfaces.
Other Subjects
Anisotropy; Chemical bonds; Heterojunctions; Photoconductivity; Photoluminescence; Polarization; Semiconducting gallium arsenide; Giant polarized photoluminescence; Semiconductor quantum wells
Type
journal article