https://scholars.lib.ntu.edu.tw/handle/123456789/296932
Title: | Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing | Authors: | Ting, C.-C. Shih, Y.-H. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2002 | Journal Volume: | 49 | Journal Issue: | 1 | Start page/Pages: | 179-181 | Source: | IEEE Transactions on Electron Devices | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0036257359&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/296932 |
DOI: | 10.1109/16.974766 |
Appears in Collections: | 電機工程學系 |
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