https://scholars.lib.ntu.edu.tw/handle/123456789/296935
Title: | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Authors: | Hong, C.-C. Chen, W.-R. JENN-GWO HWU |
Keywords: | Composed capacitor; Local thinning; Metal-oxide-semiconductor (MOS); Oxide thickness nonuniformity; Tunneling current | Issue Date: | 2002 | Journal Volume: | 41 | Journal Issue: | 1 | Start page/Pages: | 1-4 | Source: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | Abstract: | The significance of the oxide thickness nonuniformity effect on the current density-voltage (J-V) characteristics of gate oxide in an ultrathin region is demonstrated. Theoretical J-V curves of metal-oxide-semiconductor (MOS) under small and large biases were derived according to the existing literature, and were used to study the J-V characteristics of an MOS capacitor containing different local oxide thicknesses was studied. An effect we called "local thinning", which stretches out the J-V curves, was observed. The magnitude of the tunneling current is governed by the thinner oxide region in the capacitor although this region only occupies a relative small area ratio. Experiments were performed on intentional etching of silicon wafers to reinforce the oxide thickness nonuniformity effect. The experimental results are explainable by the model observation. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036309905&doi=10.1143%2fJJAP.41.1&partnerID=40&md5=116626aa68ee053a51dd1997d6319796 http://scholars.lib.ntu.edu.tw/handle/123456789/296935 |
DOI: | 10.1143/JJAP.41.1 | SDG/Keyword: | Current voltage characteristics; Electron tunneling; Etching; Silicon wafers; Tunneling current; MOS capacitors |
Appears in Collections: | 電機工程學系 |
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