Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing
Journal
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Journal Volume
20
Journal Issue
2
Pages
544-548
Date Issued
2002
Author(s)
Abstract
The growth of thin oxides by rapid thermal processing (RTP) under different O2 pressures and comparison of the uniformity of oxides by two-step oxidation and by typical one-step oxidation was presented. The process indicated that as oxidation time increases high pressure tends to make oxide thickness less uniform. The results showed that oxide thickness uniformity exhibits a 'self-compensating' behavior in low pressure oxidation, and tends to degrade with oxidation under high pressure oxidation.
Other Subjects
Dielectric materials; Electric breakdown; Film growth; Gates (transistor); Pressure effects; Rapid thermal annealing; Rate constants; Thermooxidation; Thin oxides; Thin films
Type
journal article