Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices
Journal
Applied Physics Letters
Journal Volume
61
Journal Issue
6
Pages
675-677
Date Issued
1992
Author(s)
Abstract
The improvement efficiencies of the newly reported irradiation-then-anneal (ITA) treatments applied to improve the radiation hardness of metal-insulator-semiconductor (MIS) devices with various interfacial stresses were studied. Each ITA treatment includes an irradiation of Co-60 with a total dose of 106 rads (SiO2) and an anneal in N2 at 400 °C for 10 min, successively. It is found that the efficiency of improvement strongly depends on the number of ITA treatments and especially on the interfacial stress of device. These dependencies should be explained by the possible release of SiO2/Si interfacial stress by ITA treatments.
SDGs
Type
journal article