Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodes

Journal

IEEE Electron Device Letters

Journal Volume

24

Journal Issue

6

Pages

408-410

Date Issued

2003

Author(s)

DOI

10.1109/LED.2003.813365

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0042091972&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/301814

Type

journal article