DC 欄位 | 值 | 語言 |
dc.contributor | Dept. of Electr. Eng., National Taiwan Univ. | en |
dc.contributor.author | H.-M. Wu | en_US |
dc.contributor.author | J.-Y. Lin | en_US |
dc.contributor.author | L.-H. Peng | en_US |
dc.contributor.author | C.-M. Lee | en_US |
dc.contributor.author | J.-I. Chyi | en_US |
dc.contributor.author | E. Chen | en_US |
dc.contributor.author | LUNG-HAN PENG | zz |
dc.creator | H.-M. Wu;J.-Y. Lin;L.-H. Peng;C.-M. Lee;J.-I. Chyi;E. Chen | - |
dc.date.accessioned | 2018-09-10T04:35:55Z | - |
dc.date.available | 2018-09-10T04:35:55Z | - |
dc.date.issued | 2003-12 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/304330 | - |
dc.format | application/pdf | en |
dc.format.extent | 141253 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.relation | Semiconductor Device Research Symposium, 2003 International | en |
dc.relation.ispartof | International Semiconductor Device Research Symposium (ISDRS’03) | - |
dc.source | AH-anncc | - |
dc.title | Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation | - |
dc.type | conference paper | en |
dc.identifier.doi | 10.1109/ISDRS.2003.1272156 | - |
dc.identifier.scopus | 2-s2.0-84945278485 | - |
item.fulltext | with fulltext | - |
item.openairetype | conference paper | - |
item.openairecristype | http://purl.org/coar/resource_type/c_5794 | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所
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