https://scholars.lib.ntu.edu.tw/handle/123456789/307546| Title: | High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing | Authors: | JENN-GWO HWU | Issue Date: | 2004 | Journal Volume: | 51 | Journal Issue: | 6 | Start page/Pages: | 854-858 | Source: | IEEE Transactions on Electron Devices | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-2942650753&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/307546 |
DOI: | 10.1109/TED.2004.828274 |
| Appears in Collections: | 電機工程學系 |
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